I would like to ask about DDR stress test.
My customer is facing the issue that the error occurs on DDR stress test(V.2.52) for their i.MX6Q proto-board.
They are using MCIMX6Q6AVT10AD for their proto-board and DDR3 is used for that.
For their board, MT41K512M16HA-107 x 4 are used.
And they are using ddr_stress_tester_jtag_v2.52.
As for ‘Write level HW calibration’, it can be completed normally.
And for ‘Starting DQS gating calibration’, they saw the following error message and it cannot be completed.
“ERROR FOUND, we can't get suitable value !!!! dram test fails for all values.”
They already saw the whole of DDR stress test can finish successfully on i.MX6Q-SDB, and they use the modified DS file for DDR stress test for their proto-board because the DDR3 chips used for their board are changed from DDR used for SDB.
The attached file, TEST.DS, is the ds file for their board.
The main change of the file from the one for SDB is the ‘row addresses’.
Do you have any ideas for the cause of this error?
Please let me know whether any changes of settings should be needed for DDR stress test for their proto-board other than ‘row address’ setting.
Original Attachment has been moved to: TEST.DS.zip