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Vgss specifications for short pulses for FET PSMN8R3-40YS

Question asked by Christopher Holmes on Jul 19, 2016
Latest reply on Jul 20, 2016 by LPP

The datasheet includes a maximum specification of +/-20V for Vgss.  Some manufacturers also include a specification for Vgss for short duration pulses.  For example, Diodes Inc BSS138 also has Vgss +/-20V, but can withstand +/-40V < 50 uS.

 

Does NXP have any additional data that shows if the gate is vulnerable to damage or not for short duration pulses (~1 uS) > 20V?

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