In your RF power transistor datasheet, it gives the VBW resonance point. How do you define it? If I design an RF power amplifier for handling signal bandwidth of 160MHz, how much the VBW of RF power transistor should have. Thank you.
Do you have an example datasheet that shows this?
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Thank you very much.
VBW can be found in every RF power transistor datasheet of Freescale, now NXP. Such as in datasheet of LDMOS transistor, A2I25D012N,
I want to know the definition of VBW of RF power transistor, such as how many dBc IMD3 degrades or so.
Do you have any suggestions? Thanks a lot.
Being that this is all dealing with non-linear effects, I am not sure you will find an equation that tells you what to expect. Not sure if there is perhaps a rule-of-thumb (if there is, the NXP folks should be able to tell you). For the device you state in particular, A2125D012N, you can look at Figure 5 of the datasheet to get a rough idea of what to expect. I doubt, though, that you can just "predict" it without measuring your own circuit.
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