ESDRAMC: Data corrupted during burst access across a page boundary of an 8-column SDRAM.
"This corruption is due to the fact that the ESDRAMC cannot perform a burst access across a row/page boundary. "
"SDRAM devices addressed with 8 columns, organized in 1M x 16 bit x 4 banks, cannot be used."
8 columns = 256 addresses and there are 4096 row addresses or pages in a 1M device.
The burst length is 8 and the size is 16bit x 8 =128bit.
How can this bursts across a row or page boundary?