I have a question about i.MX6DL USB PHY.
I want to change the drive strength of USB_OTG_DN and USB_OTG_DP when i.MX6SDL is device mode.
Then, can we change the drive strength by TXCAL45DN and TXCAL45DP fields in USBPHYx_TXn register (chapter 66.3.2 in IMX6SDLRM Rev.1)?
If we can do it, would you let me know the range we can set (xxx ohm to yyy ohm) and how much resistance is changed when setting is incremented (zzz ohm / bit)?
If we cannot do it by TXCAL45DN and TXCAL45DP, would you let me know how to change the drive strength?