IMX6Q更换4G内存压力测试失败

[wangzhiqiang]

1.IMX6Q更换到4G内存，使用Mx6DQSDL DDR3 Script Aid V0.08.xlsx文件生成RealView .inc
2.使用DDR_Stress_Tester_V1.0.3做calibration和压力测试。
3.select the DDR density per chip select时选择9（注：如果选择0，当2GB使用测试OK）
压力测试时总是出现测试失败如下：

loop: 1
DDR Freq: 198 MHz
t0.1: data is addr test
Address of failure: 0x10000000
Data was: 0x00000000
But pattern  should match address

内存的参数配置如下：

Manufacturer:	Micron
Memory part number:
Memory type:	DDR3-1600
DRAM density (Gb)	8
DRAM Bus Width	16
Number of Banks	8
Number of ROW Addresses	16
Number of COLUMN Addresses	10
Page Size (K)	2
Self-Refresh Temperature (SRT)	Normal
tRCD=tRP=CL (ns)	13.75
tRC Min (ns)	48.75
tRAS Min (ns)	35
System Information
i.Mx Part	i.Mx6Q
Bus Width	64
Density per chip select (Gb)	32
Number of Chip Selects used	1
Total DRAM Density (Gb)	32
DRAM Clock Freq (MHz)	528
DRAM Clock Cycle Time (ns)	1.894
Address Mirror (for CS1)	Disable
SI Configuration
DRAM DSE Setting - DQ/DQM (ohm)	48
DRAM DSE Setting - ADDR/CMD/CTL (ohm)	48
DRAM DSE Setting - CK (ohm)	48
DRAM DSE Setting - DQS (ohm)	48
System ODT Setting (ohm)	60

[igorpadykov]

Hi wang

log: Address of failure: 0x10000000
Data was: 0x00000000
But pattern  should match address

may mean some hardware/layout error, like broken trace, as bit 28 is zero (should be "1").

One can check it with oscilloscope, reading/writing with jtag some data to

0x10000000 address.

Best regards
igor
-----------------------------------------------------------------------------------------------------------------------
Note: If this post answers your question, please click the Correct Answer button. Thank you!
-----------------------------------------------------------------------------------------------------------------------