For NXP AFSC5G35D37 PA, we are getting an efficiency of ~35% at 5 W output power as opposed to 39% mentioned in the datasheet. Similarly, for AFSC5G26D37 PA, ~36% efficiency at 5W output power is obtained against 40% mentioned in the datasheet.
How do we obtain the efficiency claimed in the data sheet of the above mentioned Power Amplifiers?
Datasheet provides real performance data measured on NXP reference circuit. You must get the same performance if using our board and the same testing conditions.
Note. Performance data are provided for LTE test signal: Pout = 5 W Avg., 1 x 20 MHz LTE, Input Signal PAR = 8 dB @ 0.01% Probability on CCDF. CW performance will be different.
You can get documentation for this circuit and quick start instructions from the "RF CIRCUIT COLLECTION".
https://www.nxp.com/design/development-boards/rf-circuit-collection:RF-CIRCUIT-COLLECTION
Best Regards
Pavel
NXP TIC