Hello,
S12ZVM has the function the slew rate control of high side gate driving, GSRCHS,
and the range is as below,
Iref(min)=10uA -> Iout = 10u * 36 * 450 = 162mA
Iref(max)=80uA -> Iout = 80u * 36 * 450 = 1.29A
If we would like to reduce the current further than 162mA, is there any good idea?
Best Regards,
Ikki
Solved! Go to Solution.
Hi,
Looking at the concept of the FET Pre-Driver in the S12ZVM ref. manual, a way to decrease Iref and Iout is to decrease voltage on VBS. But, this can lead to some other consequences.
Another way is to put a resistor on HG pin (and power FET's gate). With this approach the max Iout current will be decreased as well.
Regards,
iggi
Hi,
Looking at the concept of the FET Pre-Driver in the S12ZVM ref. manual, a way to decrease Iref and Iout is to decrease voltage on VBS. But, this can lead to some other consequences.
Another way is to put a resistor on HG pin (and power FET's gate). With this approach the max Iout current will be decreased as well.
Regards,
iggi
iggi-san,
Thank you for your response.
To decrease voltage on VBS would not be good for the BLDC stable rotation,
so I understand that the only way is to put a resistor on HG pin and there is no way to reduce the gate drive current by itself.
Ikki