how to reduce the current of High side gate driving on S12ZVM

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how to reduce the current of High side gate driving on S12ZVM

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ikkishingu
Contributor II

Hello,

 

S12ZVM has the function the slew rate control of high side gate driving, GSRCHS,

 

and the range is as below,

 

Iref(min)=10uA -> Iout = 10u * 36 * 450 = 162mA

Iref(max)=80uA -> Iout = 80u * 36 * 450 = 1.29A

 

If we would like to reduce the current further than 162mA, is there any good idea?

 

Best Regards,

Ikki

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iggi
NXP Employee
NXP Employee

Hi,

Looking at the concept of the FET Pre-Driver in the S12ZVM ref. manual, a way to decrease Iref and Iout is to decrease voltage on VBS. But, this can lead to some other consequences.

Another way is to put a resistor on HG pin (and power FET's gate). With this approach the max Iout current will be decreased as well.

FET pre-driver concept.PNG.png

Regards,

iggi

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iggi
NXP Employee
NXP Employee

Hi,

Looking at the concept of the FET Pre-Driver in the S12ZVM ref. manual, a way to decrease Iref and Iout is to decrease voltage on VBS. But, this can lead to some other consequences.

Another way is to put a resistor on HG pin (and power FET's gate). With this approach the max Iout current will be decreased as well.

FET pre-driver concept.PNG.png

Regards,

iggi

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ikkishingu
Contributor II

iggi-san,

Thank you for your response.

To decrease voltage on VBS would not be good for the BLDC stable rotation,

so I understand that the only way is to put a resistor on HG pin and there is no way to reduce the gate drive current by itself.

Ikki

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