How many times of D-Flash can be program/erase ?

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How many times of D-Flash can be program/erase ?

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xiaokangkp
Contributor III

when i refer to the datasheet of MC9S12XEP100  Page1232 :<Table A-20.  NVM Reliability Characteristics>, some problems Popped out:

1- What's the meaning of 500K^3 , 500*1000 or 500*1000000000 ?

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2- On page 1231:

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if i just use the first 10 words of a sector, when i erase the seector and  write the first 10 words  repeatedly, Does it matter to the program/erase cycles of the rest words in the sector?   

3 Replies

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dianabatrlova
NXP TechSupport
NXP TechSupport

Hello,

1. We are very sorry for confusing information in the datasheet.

The number 3 means 3. note under the Table A-20.

2. A Flash word or phrase must be in the erased state before being programmed.

Cumulative programming of bits within a Flash word or phrase is not allowed.

Best regards,

Diana

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xiaokangkp
Contributor III

Dear,Diana

Thanks for your help.

about the second question, maybe i didn't describe it clearly. I means when i do 100K times: erase the seector --> write the first 10 words erase the seector write the first 10 words >.......- erase the seector write the first 10 words , Does it matter to the program/erase cycles of the rest words(except for the first 10 words) in the sector? 

Best regards,

kevin

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dianabatrlova
NXP TechSupport
NXP TechSupport

Dear Kevin,

In your use case, it will be counted as 100K Program/erase cycles for whole sector, but you can write for example 4 times at the different address in the sector and it is counted as 1 Program/erase cycle.
So, we may say that Program/erase cycle term rather equals to erase cycle

Best regards,

Diana