Recommend replacement for obsolete BJT

[mattfindlow]

Hi,  I am copying a Silicon Labs board which has an obsolete BJT.  I was wondering what NXP had to offer that might be a suitable replacement. Package type doesn't have to match. RF performance parameters at bottom of page says the current is 360mA.

NESG250134-T1-AZ

FEATURES • This product is suitable for medium output power (800 mW) amplification PO = 29 dBm TYP. @ VCE = 3.6 V, Pin = 15 dBm, f = 460 MHz PO = 29 dBm TYP. @ VCE = 3.6 V, Pin = 20 dBm, f = 900 MHz • MSG (Maximum Stable Gain) = 23 dB TYP., @ VCE = 3.6 V, Ic = 100 mA, f = 460 MHz • Using UHS2-HV process (SiGe technology), VCBO (ABSOLUTE MAXIMUM RATINGS) = 20 V • 3-pin power minimold (34 package)

[LPP]

NXP doesn't offer medium/high power BJT RF transistors suitable for low voltage (~3.3V) operation similar to NESG250134.

Though, we have wide portfolio of LDMOS transistors. You can design similar class E amplifier using NXP parts.

Please, evaluate AFT05MS003N RF Power LDMOS Transistor, 1.8–941 MHz, 3 W, 7.5 V
http://cache.nxp.com/docs/en/data-sheet/AFT05MS003N.pdf

Usefull class E design tutorial from Keysigh:
https://www.youtube.com/watch?v=iABwHeZ3_Jw

Have a great day,
Pavel
NXP TIC

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