How do you define the VBW of RF power transistors?

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How do you define the VBW of RF power transistors?

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Contributor I

In your RF power transistor datasheet, it gives the VBW resonance point. How do you define it? If I design an RF power amplifier for handling signal bandwidth of 160MHz, how much the VBW of RF power transistor should have. Thank you.

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Contributor II

Do you have an example datasheet that shows this?

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Contributor I

Thank you very much.

VBW can be found in every RF power transistor datasheet of Freescale, now NXP. Such as in datasheet of LDMOS transistor, A2I25D012N​,

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I want to know the definition of VBW of RF power transistor, such as how many dBc IMD3 degrades or so.

Do you have any suggestions? Thanks a lot.

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Contributor II

Being that this is all dealing with non-linear effects, I am not sure you will find an equation that tells you what to expect. Not sure if there is perhaps a rule-of-thumb (if there is, the NXP folks should be able to tell you). For the device you state in particular, A2125D012N, you can look at Figure 5 of the datasheet to get a rough idea of what to expect. I doubt, though, that you can just "predict" it without measuring your own circuit.

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