Can A2T09D400-23N be used for asy Doherty structure without reducing its VBW? Can this transistor be used for LTE 20M system for its narrow VBW?

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Can A2T09D400-23N be used for asy Doherty structure without reducing its VBW? Can this transistor be used for LTE 20M system for its narrow VBW?

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ryanfeng
Contributor I

In datasheet describe the VBW is only 35MHz which I think it will bring heavy memory efficiency with DPD co-working. But I find another test report which show this A2T09D400-23N' VBW is about 100MHz. The only thing I want to know is whether it is used for LTE 20MHz basestation system by tuning to asy Doherty structure. 

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  • RF

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LPP
NXP Employee
NXP Employee

A2V09H525-04,  A2V09H400-04N devices are more suitable for 20 MHz LTE signals.

Have a great day,
Pavel
TIC

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LPP
NXP Employee
NXP Employee

IMD3 curves are provided in datasheet. They are consistent with 35MHz VBW as specified.

A2T09D400-23N is designed for Digital Predistortion Error Correction Systems. Without DPD, this device can't meet minimum ACPR requirement for LTE signals.


The output of DPD circuit expands input bandwidth of signal! DPD can expand input signal to power amplifier both in frequency and in PAR. Recommended VBW > 3-5x signal BW for best performance with DPD (You should contact manufacturer of DPD for exact requirments).

So, A2T09D400-23N is not suitable for 20MHz LTE bandwidth.


Have a great day,
Pavel
TIC

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Note: If this post answers your question, please click the Correct Answer button. Thank you!
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ryanfeng
Contributor I

Actually I have made a challenged design with AFT09S310 on my LTE 20M project. 09S310 is also only about 45MHz VBW. But I think there should be some method to improve the VBW to 60MHz then meet the 3* BW experience advice. Let's see.

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695 Views
ryanfeng
Contributor I

Actually I have made a challenged design with AFT09S310 on my LTE 20M project. 09S310 is also only about 45MHz VBW. But I think there should be some method to improve the VBW to 60MHz then meet the 3* BW experience advice. Let's see.

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