Hi
I'm looking for solution that output 44dBm with PAR=10dB which the freq BW requirement is from 1800~2200MHz. the EFF should be as high as better. any comments from NXP RF POWER solution
> the EFF should be as high as better
Conventional power amplifier designs only give maximum efficiency near the maximum rated power for the device. As the drive power is backed off from this point, the efficiency drops sharply and a mean efficiency is much lower than the efficiency at the maximum power, or PEP, level.
Several efficiency enhancement techniques were invented. Classical solutions are Doherty amplifier, Envelope tracking, Outphasing Amplifier and Envelope Elimination and Restoration (EER). I recommend the book "RF Power Amplifiers for Wireless Communications" from Steve C. Cripps with clear explanation of these techniques (you can Google it).
The Doherty Amplifier is the workhorse of the cellular infrastructure market. NXP offers several devices to be used in symmetrical or asymetrical Doherty amplifiers. Other techniques can be used as well but we do not offer reference designs and do not provide performance values for these configurations.
>looking for solution that output 44dBm with PAR=10dB
I'm not sure if you need 44dB average or peak power.
Product selector:
http://www.nxp.com/products/rf/rf-power-transistors/rf-cellular-infrastructure/1450-2200-mhz:RF-CELL...
For 44dB PEP:
Single channel integrated Power Amplifier, 4 W AVG, 44.7 P1dBm
http://cache.nxp.com/docs/en/data-sheet/MW7IC2040N.pdf
Dual channel integrated Power Amplifier, optimized for Doherty Application, 5.0 W AVG, 45.6 P1dBm
http://cache.nxp.com/docs/en/data-sheet/A2I22D040N.pdf
Dual channel integrated Power Amplifier, optimized for Doherty Application, 5.3 W AVG, 46.5 P1dBm
http://cache.nxp.com/docs/en/data-sheet/A2I22D050N.pdf
Two LDMOS transistors, optimized for Doherty Application, 6.3 W AVG, 47.7 P1dBm
http://cache.nxp.com/docs/en/data-sheet/AFT20P060-4N.pdf
For 44dB AVG:
GaN transistor, Optimized for Doherty Applications, 45W AVG, 51 P1dBm
http://cache.nxp.com/docs/en/data-sheet/A2G22S160-01S.pdf
For asymmetrical Doherty, 44.5dBm AVG
http://cache.nxp.com/docs/en/data-sheet/A2T20H160W04N.pdf
For asymmetrical Doherty, 44.5dBm AVG
http://cache.nxp.com/docs/en/data-sheet/A2T18H160-24S.pdf
Tested in a Symmetrical Doherty Configuration, 44.7dBm AVG
http://cache.nxp.com/docs/en/data-sheet/AFT20P140-4WN.pdf
Tested in a Symmetrical Doherty Configuration, 44.7dBm AVG
http://cache.nxp.com/docs/en/data-sheet/MD7IC18120N.pdf
Have a great day,
Pavel
NXP TIC
-----------------------------------------------------------------------------------------------------------------------
Note: If this post answers your question, please click the Correct Answer button. Thank you!
-----------------------------------------------------------------------------------------------------------------------