Winners! NXP received a number of creative submissions over the course of the MRFX Design Challenge. We appreciate the enthusiasm from the community as designers were hard at work on their RF projects. Now is the moment everyone's been waiting for as NXP proclaims the MRFX Design Challenge winners. First Place Winner  Russell Kendrick | Bio + Full Project Description Project Video: MRFX1K80H 50 MHz Project Brief This amplifier is intended to be driven with a modern transceiver with 100 watts output on 50 MHz. To protect the MRFX1K80H from overdrive a series of RF pads are used to reduce the input to the proper level. The input matching is accomplished by using a 9:1 conventional RF transformer formed on an Amidon BN 61-202 core. An 82 nH inductance is in series with the high impedance winding of the transformer. This arrangement yielded an input match of 1.3:1 SWR over the entire 6-meter Amateur band when measured without the pads. Shunt gate resistance is used to prevent oscillation at low frequencies. This is the same approach used in the 27 MHz test circuit from NXP. Bias will be supplied by a DAC driven by the microcontroller that will manage the finished amplifier Second Place Winner        Floris Roosen | Bio                                                                         Project Video: Roosen Single-Ended Broadband (87-110 MHz) RF Design         Third Place Winner Mike Mysliwiec | Bio Project Video: 2xMRFX1K80H 1.8-54 MHz HF Amplifier   Overview  NXP is hosting an RF power amplifier design contest. Applicants will record a video of their power amplifier/demo using NXP’s new 65V LDMOS 1800 W RF Power transistor, MRFX1K80H The contest is open to students, professional engineers, companies or individuals Key Dates Contest kick-off: October 30, 2017 Submit a video (3-5 minutes in length) no later than Friday, January 26, 2018, by sending a link to any video website, such as YouTube, YouKu or others to rfindustrial@nxp.com Results will be announced on Monday, February 12, 2018 Prizes • 1st prize: $3,000 cash award + 15 MRFX1K80H samples. Showcase designer bio and video in an NXP blog • 2nd prize: $1,000 cash award + 10 MRFX1K80H samples • 3rd prize: $500 cash award + 10 MRFX1K80H samples The prize amounts are before tax All accepted videos will be posted on www.nxp.com/videos  Judging Criteria How to enter the competition Please click on the link below for the latest details and to access the MRFX Design Challenge page www.nxp.com/MRFXdesign 

Demo This is an ideal tri-radio system solution. The demo shows one board with 3 Wi-Fi radios. They are 2.4GHz, 5 GHz, 802.11AC working in conjunction with BLE devices, then running a virtual IoT network where different virtual machines will handle different parts of the processes. One of the virtual machines will handle all IoT communications (from the BLE devices). Another virtual machine will take care of the DLNA  (Video streaming to a wireless tablet) and the last virtual machine will run the firewall system. All data that is being transferred through the platform can be visually displayed on the GUI for each of the instances shown. Products Product Link QorIQ® LS1043A reference design board QorIQ® LS1043A-RDB | NXP  Freedom Development Kit for Kinetis® KW41Z/31Z/21Z MCUs https://www.nxp.com/design/development-boards/freedom-development-boards/wireless-connectivy/freedom-development-kit-for-kinetis-kw41z-31z-21z-mcus:FRDM-KW41Z?&fsrch=1&sr=8&pageNum=1 Training Containers 

Demo In this demo, we are showing an 802.11AD 60GHz Wireless Demo with 3Gbps throughput using two LS1046ARDB (ARM Cortex A72 Quad Core) gateways and an LS1012ARDB gateway. These gateways simulate communication between stations. Products Product Link QorIQ® Layerscape 1012A Low Power Communication Processor Layerscape LS1012A Communication Processor for the IoT | NXP  QorIQ® LS1012A Development Board https://www.nxp.com/design/qoriq-developer-resources/qoriq-ls1012a-development-board:LS1012A-RDB?&fsrch=1&sr=2&pageNum=1 QorIQ® Layerscape 1046A and 1026A Multicore Communications Processors QorIQ® Layerscape 1046A | NXP  QorIQ® LS1046A Development Board QorIQ® LS1046A Development Board | NXP  Training New Kid on the Block - 60 GHz Wi-Fi 

Demo NXP’s new MRF13750H transistor delivers 750 W CW for 915 MHz applications. Based on 50 V silicon LDMOS, the MRF13750H is an attractive alternative to vacuum tubes for very high power industrial systems. Applications range from industrial heating/drying, curing, and material welding, as well as particle accelerators Product MRF13750H 750 W CW 915 MHz Applications Industry’s highest power for 915 and 1300 MHz 50 V LDMOS 915 MHz reference circuit 750 W CW Gain 19.5 dB Efficiency 63%

Demo NXP has a full range of high power LDMOS drivers and finals for cellular base stations. Our cellular LDMOS portfolio delivers industry leading performance with powerful and efficient products targeting rapidly growing frequencies and regions in the world. This demo wall features new devices that cover all cellular bands from 575 to 4000 MHz Products http://www.nxp.com/products/rf/rf-power-transistors/rf-cellular-infrastructure/2300-2690-mhz/100-3600-mhz-3.2-w-avg.-28-v-airfast-rf-ldmos-wideband-integrated-amplifiers:A2I25D025N A2I25D025N 5 W IC Final Small Cell Solution • Frequency 2100–2900 MHz • Doherty performance at 8 dB OBO 2300-2700 MHz    Gain 29.2 dB    Efficiency 42%    Peak 46 dBm • TO-270WB-17 plastic package A2I20D040N 5 W IC Final Small Cell Solution • Frequency 1400–2300 MHz • Doherty performance at 8 dB OBO 1800-2200 MHz    Gain 29.2 dB    Efficiency 46.5%    Peak 47.6 dBm • TO-270WB-17 plastic package A2I35H060N 5 W IC Final Small Cell Solution • Frequency 3400–3800 MHz • Doherty performance at 8 dB OBO 3400-3600 MHz    Gain 24 dB    Efficiency 32%    Peak 48 dBm • TO-270WB-17 plastic package A3I35D025N 5 W IC Final Small Cell Solution • Frequency 3200–4000 MHz • Doherty performance at 8 dB OBO 3400-3600 MHz    Gain 25 dB    Efficiency 35%    Peak 42.8 dBm • TO-270WB-17 plastic package A2T08VD020N 48 V LDMOS Solution • Frequency 720–960 MHz • Class AB performance at 10 dB OBO    Gain 19.3 dB    Efficiency 21.5% • Peak power 43.4 dBm • PQFN 8x8 package A2I09VD030N 48 V LDMOS Solution • Frequency 575–960 MHz • Doherty performance at 10 dB OBO    Gain 34.4 dB    Efficiency 20% • Peak power 46 dBm • TO-270WB-15 package

Demo NXP has a full range of high power LDMOS drivers and finals for cellular base stations. Our cellular LDMOS portfolio delivers industry leading performance with powerful and efficient products targeting rapidly growing frequencies and regions in the world. This demo wall features new devices that cover all cellular bands from 575 to 2400 MHz Products A2V09H300-04N 48 V LDMOS Solution • Frequency 720-960 MHz • Final Doherty performance at 8 dB OBO • Gain 19.5 dB • Efficiency 53% • Peak power 56 dBm • OM-780-4 package A2V07/09H400-04N 48 V LDMOS Solution • Frequency 575–960 MHz • Final Doherty performance at 8 dB OBO o Gain 18 dB o Efficiency 53% • Peak power 57.5 dBm • OM-780-4 package A2V07/08/09H525-04N 48 V LDMOS Solution • Frequency 575–960 MHz • Final Doherty performance at 8 dB OBO o Gain 18.7 dB o Efficiency 53% • Peak power 58.5 dBm • OM-1230-4L package A2T23H200W23S 28 V LDMOS Solution • Frequency 2300–2400 MHz • Final Doherty performance at 8 dB OBO o Gain 15.5 dB o Efficiency 50% • Peak power 55 dBm • ACP-1230-4L2S package A3T18H360W23S 28 V LDMOS Solution • Frequency 1805–1880 MHz • Final Doherty performance at 8 dB OBO o Gain 17.5 dB o Efficiency 53% • Peak power 55.5 dBm • ACP-1230-4L2S package A3T21H450W23S 28 V LDMOS Solution • Frequency 2110-2200 MHz • Final Doherty performance at 8 dB OBO o Gain 15.5 dB o Efficiency 49.5% • Peak power 57.4 dBm • ACP-1230-4L2S package

Demo Watch this training video about NXP’s new 65 V LDMOS technology that speeds RF power design. This extra-high voltage LDMOS process will give rise to a new generation of products: the MRFX series   Products MRFX1K80H|1800 W CW, 1.8-470 MHz, 65 V|NXP  MRFX1K80N|1800 W CW, 1.8-470 MHz, 65 V|NXP 

Demo Watch this video showing how NXP shined at International Microwave Symposium 2017. It includes our RF team and the products and technologies being shown for cellular infrastructure, industrial and commercial solutions Products shown at IMS 2017 Cellular LDMOS Finals Cellular LDMOS Drivers Cellular GaN Solutions RF Industrial RF Aerospace and Defense Cocoon Radar Demo Kit 5G Cellular Base Station Demo Links http://www.nxp.com/5Gradio http://www.nxp.com/Airfast http://www.nxp.com/RFGaN http://www.nxp.com/RFOutdoorSmall http://www.nxp.com/products/rf/rf-power-transistors/rf-broadcast-and-ism:RF-BROADCAST-ISM-HOME http://www.nxp.com/products/rf/rf-power-transistors/rf-aerospace-and-defense:RF-AEROSPACE-DEFENSE-HOME

Demo NXP boasts about power and prowess in the industry’s highest power density in LDMOS technology with a compact 750 W 1.3 x 2.55 inch reference circuit. See this demo for how our transistors deliver highest RF output power for automatic dependent surveillance – broadcast (ADS-B), identification friend-or-foe (IFF), and distance measuring equipment (DME) systems. Product AFV10700H|700 W Pulse, 1030-1090 MHz, 52 V|NXP (50V LDMOS, 750 W Peak, Gain 17dB, Efficiency 58%) Link www.nxp.com/RFPower

Demo Demo Summary User case: Quality of Service Feature Demo. Two PCs and one router. One PC serves as the WAN side (Server), the other PC acts as the LAN (Client). There is streaming video from the WAN Side to the LAN side. Traffic can be analyzed and compared Other router possible use cases: WAN Failover,  Load Balancing, Firewall, etc. Products QorIQ® Layerscape 1024A|NXP  QorIQ Layerscape Processors Based on ARM Technology|NXP  Links Small Business Router|NXP  QorIQ® Layerscape 1024A|NXP 

Demo Benefits 1. More power – Higher voltage enables higher power density, which helps reduce the number of transistors to combine. 2. Faster development time – With higher voltage, the output power can be increased while retaining a reasonable output impedance. 3. Design Reuse – This impedance benefit also ensures pin-compatibility with current 50 V LDMOS transistors for better scalability. 4. Manageable current level – Higher voltage reduces the current losses in the system. 5. Wide safety margin – The higher breakdown voltage of 182 V improves ruggedness and allows for higher efficiency classes of operation Products MRFX1K80H MRFX1K80N MRF1K50H MRFE6VP61K25H Training 65 V LDMOS Introduction Related IMS MicroApps: The Latest High Voltage LDMOS Technology Delivers Industry’s Highest Output Power in a Single Package  Other Links NXP Announces New 65 V LDMOS Technology that Speeds RF Power Design 

Demo NXP boosts aerospace communications and radar performance for defense systems. See this demo for how our transistors deliver highest RF output power for radar and identification, friend-or-foe (IFF) systems     Demo / Product features MMRF1314H 1000 W Pulse 52 V LDMOS Transistor 100 W Peak, 1200-1400 MHz reference circuit Ceramic package NI-1230H-4S Internal prematch > 20:1 VSWR   MMRF1317H 1500 W Pulse 50 V LDMOS Transistor Highest power narrowband IFF transistor for defense and civil use Ceramic package NI-1230H-4S 1500 W Peak, 1030-1090 MHz reference circuit > 10:1 VSWR   MMRF1312H 1200 W Pulse 52 V LDMOS Transistor Highest power broadband L-Band transistor for military and civil use Ceramic package NI-1230H-4S 1200 W Peak, 900-1215 MHz reference circuit > 20:1 VSWR   NXP Recommends MMG2010N MMRF1317H MMRF1314 MMRF1312 MMRF5300 MMRF5301  

Demo NXP has a complete portfolio of RF low power devices. These include: Drivers and pre-drivers for RF designs Output RF devices for small cell solutions Low-noise amplifiers (LNAs) for transceiver applications     Demo / product features MMZ27333B 2 W BTS Driver Amplifier 1500 – 2700 MHz operation P1 dB  = 33 dBm Gain = 36 dB @ 2600 MHz LTE 10 MHz ACLR = - 48 dBc at 20 dBm 4 x 4 mm QFN Package MMG30271B 1/2 W BTS Pre-Driver GPA 300 – 4000 MHz operation P1dB = 27 dBm Gain = 17 dB at 2600 MHz ICC = 135 mA SOT89 Package MMG30301B 1 W BTS Pre-Driver GPA 900 – 4300 MHz operation P1 dB = 30 dBm Gain = 16 dB @ 2600 MHz ICC = 280 mA SOT89 Package NXP Recommends MMZ27333B MMG30271B MMG30301B  

Demo NXP demonstrates the industry’s highest power LDMOS narrowband transistor for IFF and civil transponders     Demo / product features MMRF2010N 250 W Pulse 50 V LDMOS Transistor 250 W Peak, 1030-1090 MHz reference circuit Plastic package TO-270WB-14 50 Ohm Input matching Singe ended   MMRF1317H 1500 W Pulse 50 V LDMOS Transistor Highest power narrowband IFF transistor for defense and civil use Ceramic package NI-1230H-4S 1500 W Peak, 1030-1090 MHz reference circuit > 10:1 VSWR   NXP Recommends MMG3005N MMRF2010N MMRF1317H                                                                                                                         

Demo NXP has released the 1500 W MRF1K50H and MRF1K50N. The industry’s highest power transistors for ISM, FM broadcast and sub-GHz aerospace applications. These are pin-compatible so can be situated on the same PCB as existing solutions on the market Demo / product features MRF1K50H 1.5 kW LDMOS Transistor 1–500 MHz, 1500 W CW 74% efficiency 23.5 dB gain Extremely rugged  (65:1 VSWR) MRF1K50N 1.5 kW LDMOS Transistor 1–500 MHz, 1500 W CW 73% efficiency 23 dB gain 30% lower thermal resistance compared to ceramic package Extremely rugged  (> 65:1 VSWR) NXP Recommends MRF1K50H MRF1K50N

Demo NXP’s new Doherty amplifier-optimized power transistors provide high power, small footprints, and higher frequencies required for use in current and next-generation cellular base stations. The four new transistors collectively cover cellular bands from 1805 to 3600 MHz, meeting the needs of wireless carriers for superior performance at higher frequencies     Demo / product features A2G35S160-01S / A2G35S200-01S 48 V GaN Doherty Power Amplifier Solution Frequency 3400–3500 MHz Asymmetrical Doherty performance at 8 dB OBO Gain 13.8 Db Efficiency 45.8% Peak power 55.2 dBm NI-400S-2S package   A2G26H281-04S 48 V GaN Doherty Power Amplifier In-package Solution Frequency 2496–2690 MHz Doherty performance at 8 dB OBO Gain 15.3 dB Efficiency 57% Peak power 54.6 dBm NI-780S-4L package   A2G22S251-01S 48 V GaN Single-ended Transistor Frequency 1805–2200 MHz Class AB performance at 7 dB OBO Gain 18 dB Efficiency 35% Peak power 53.8 dBm NI-400S-2S package   NXP Recommends A2G22S251-01S – Single-ended GaN for 1805-2200 MHz cellular base stations A2G26H281-04S – In-package asymmetric Doherty GaN for 2496-2690 MHz cellular base stations A2G35S160-01S – Single-ended GaN for 3400-3600 MHz cellular base stations A2G35S200-01S – Single-ended GaN for 3400-3600 MHz cellular base stations   Fast Track 5G with NXP

The demo from Code is an ultra-compact Sub-GHz to Wi-Fi Border Router solution for use in Home Automation Wireless Sensor Nodes, Smart Lighting, Smart City, Smart Meters, Smart Parking and IoT. The demo consists of an NXP SCM-i.MX 6SoloX V-Link device (i.MX6SoloX/PF0100/512MB LPDDR2) + Code V-Link Top board with 802.11a/b/g/n/ac module + Code Carrier board with the Phalanx Border Router. The Phalanx Border Router provides an optimized mesh network for sensing applications SCM V-Link technology is ideal for space-constrained applications allowing customers to integrate vertically. Features: Top board: Broadcom 2.4 GHz & 5 GHz Wi-Fi, 802.11 a/b/g/n/ac , up to 390 Mbps. U.FL standard antenna connector. SCM-i.MX6 SX V-Link Top board form factor, 15.5mm x 15.5mm. Optimized mesh network for sensing applications. Thousands of nodes, minimizing deployment costs. 900 MHz Wireless. A new, clever routing algorithm which reduces routing overhead. IPv6 capable __________________________________________________________________________________________________________________ Featured NXP Products: Single Chip System Modules (SCM)|NXP Partner CODE Ing __________________________________________________________________________________________________________________  

Demo     Prescient’s PA Module Demo / product features (Value proposition) NXP’s cutting edge RF solution for medical applications Compelling portfolio at 2.45 GHz with 140 W–300 W output power, high VSWR NXP 140 W LDMOS inside Neuwave’s Certus 140 Ablation System for cancer NXP Recommends MRF24300N MRF7S24250N RF Industrial, Scientific and Medical      

Demo Demo shows LS1021A-IoT gateway solutions for the Smart Home, Industrial and City with fog/Edge to Cloud connectivity  Secure: Secure Boot, Secure Debug, Tamper Detect, Trust Zone and Trust Architecture support Acceleration & Offload:  >2Gbps IPSEC encrypted traffic Performance HW Cryptographic Accelerators, CAN & QUICC Engine for industrial protocols Video Surveillance: Secure Network Video Surveillance with > 60 channels   Product Link LS1021A-IoT Gateway Reference Design LS1021A-IoT Gateway Reference Design | NXP 

Demo High Performance Enterprise Access Point OEM Reference Solutions for Layerscape and QorIQ families.  Demo showcases 802.11AC based Enterprise Access Points showing >2.2Gbps of WIFI with Dual 11AC WIFI cards with very low CPU to provide head room for additional applications to be run.  OEM  Alpha Networks & Embedded Planet Reference Solutions for T1023 and LS1043 Features Wireless Performance up to 2.5Gbps Maximum ARM A53 or Power PC application headroom Proven Wireless partners Quantenna, Celeno & QCA Support for new multi-user MIMO transmission to groups of clients NXP Recommends QorIQ T1024/14 and T1023/13 Dual- and Single-Core C QorIQ LS1043A and LS1023A Multicore Communications