NTAG I2C plus EEPROM endurance

[vk5]

In the NTAG I2C plus datasheet, the EEPROM endurance for ambient temperatures seem to be lower than for extreme temperatures. Is that right?

Also, is the endurance calculated for 16 byte blocks or is it per byte? When we write 16 bytes via I2C, are all 16 erased and count towards endurance or only the bytes whose values change?

[EduardoZamora]

Hello @vk5

Hope you are doing well.

As you mention, write endurance depends on the temperature and can be lower if the device operates under limit conditions.

Write endurance would depend on the WRITE command functionality. NFC WRITE command requires a page address and writes 4 bytes of data into the addressed page. I2C WRITE operation always handle 16 bytes (one block) to be written.

For operations requiring several memory transactions, please consider using the SRAM.

Regards,
Eduardo.

[vk5]

@EduardoZamora thanks for your quick response

Our application requires non-volatile memory, hence we cannot use the SRAM and the write endurance is a critical parameter.

To confirm, if we only use I2C write commands at ~25C, the minimum endurance is 500,000 for each 16 byte block?

[EduardoZamora · Accepted solution]

Hi,

As you mention, min write endurance should be 500000 cycles under such circumstances.

Regards,
Eduardo.