K20 internal EEPROM endurance

[chobin]

Hallo,

I'm developing a project using kinetis K20 microcontroller and I need, for the first time, to use its internal EEPROM. I read the AN4282 application note where there is a formula to calculate the EEPROM endurance. My parametrs value are: EFlash = 32kB, SPLIT=0.5, EEESIZE=1024Byte. The formula result is 310000 cycles assuming 16 bit and 32 bit accesses.

To help myself to explain my request I suppose that exist an imaginary EEPROM endurance counter and its initial value is 310000 cycles.

When I store a data in a EEPROM cell, the endurance counter is decremented for a singole cell o for all EEPROM cell? In other words, when I store a data,  the endurance counter is updated for that single cell or all EEPROM cells? For example: I write the first EEPROM cell 350000 times. is only the first cell corrupted or all EEPROM cells are corrupted? There is an imaginary endurance counter for each EEPROM cell or one only for the whole EEPROM?

I hope tha my request is clear.

Many thanks in advance for your support.

Kinds Regards,

Many thanks in advance for your support.

Kinds Regards,

Chobin

[kerryzhou]

Hi chobin,

 Agree with mjbcswitzerland's reply!

  K20 EEPROM is using the FlexNVM and the FlexRAM to emulate the eeprom funciton, so the endurance is not only one cell endurange, it is using the flexNVM backup area to store it, then it will large the eeprom endurance.

 Just as the AN4282 already give the equation and the examples, you can calculate the endurance with your related configuration, lager backup memory will have larger endurance.

If this type eeprom endurance still can't meet your demand, you also can consider to use the external eeprom chip.

Wish it helps you!

If you still have questions about it, please kindly let me know!

Best Regards,

Kerry

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[mjbcswitzerland]

Hi

Have you also tried the calculator: TFS FlexMem Endurance Calculator ?

As the application note specifies, the calculated number of cycles is a general indication and assumes that all addresses are written equally. This means that you also need to understand how you are actually going to use the EEPROM content in the application.

Since the EEPROM method is an emulation of EEPROM based on data Flash (effectively the same characteristics as program flash - 2k sector erase size, long word writes and 10k write/erase cycles in the case of the K20) it spreads the writes over the available memory and tries to reduce the amount of erase cycles needed.

If you know the use that your memory will have it is also possible to perform EEPROM emulation in standard program (or data) Flash using a software algorithm best adapted to your use. Although software emulation may not achieve the same endurance values as the built-in EEPROM emulation (depending on actual use) but has the flexibility in that both DN and DX parts can be used.

Regards

Mark