Hi,
Sorry for the later reply.
I don't quite understand the "POD" abbreviation means of "I am able to mass erase from the PE Micro Universal multilink POD over JTAG ". What's "POD" means?
And there seems your application works with some in-program Flash operation code: "I now have the code programmed in using the PE pod and everything does run properly.. including my data stored in EEPROM/FLEXNVM is. All locations are storing and saving just as they should. So that means addresses in the upper 64K of the D-Flash are erasing and programming just fine. " If that means, your application code call the Flash commander could do erase/program D-Flash operation?
And about your question: "Do you have any specifications on what occurs when a flash location has been exhausted?"
What's the means about the Flash location has been exhausted? If the Flash location had been reach the Flash operation cycling endurance?
In fact, the Flash module provide "Read 1s Block/Section" command to check if that Flash block/section reach the Flash cycling endurance. Have you tried those Flash command?
Only the 'normal' read level should be employed during normal flash usage. The nonstandard, 'user' and 'factory' margin levels should be employed only in special cases.
They can be used during special diagnostic routines to gain confidence that the device is not suffering from the end-of-life data loss customary of flash memory devices.
Thank you for the attention.
Have a great day,
Ma Hui
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