Effect of Read disturb on MKV46F128VLL16 Flash memory

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Effect of Read disturb on MKV46F128VLL16 Flash memory

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anup_gandra
Contributor I

Hi,

I am using MKV46F128VLL16 MCU in one of our project's. I want to split flash memory and use one sector (last sector) of flash memory for storing some parameters basically lie EEPROM memory.

Can i use this flash / pflash for this?

Also what's the effect of read disturb (reading a flash memory repeatedly without an erase cycle) ? How many times i can read a location without any erase and write cycle before the data gets corrupted/weared out?

Thanks,

Anup

1 Reply

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kerryzhou
NXP TechSupport
NXP TechSupport

Hi  Anup Kumar Gandra ,

  Of course, you can use the last sector as your own user specific data area.

  As the smallest erase flash unit is the sector, so you can use the last flash sector.

  Just make sure your app code won't touch the last sector.

  If you just read the flash, no erase and write, it won't influence the flash cycle. As you know, one complete flash cycle is program+erase.

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So, just read, no times limit in the theory!

Kerry

 

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