<?xml version="1.0" encoding="UTF-8"?>
<rss xmlns:content="http://purl.org/rss/1.0/modules/content/" xmlns:dc="http://purl.org/dc/elements/1.1/" xmlns:rdf="http://www.w3.org/1999/02/22-rdf-syntax-ns#" xmlns:taxo="http://purl.org/rss/1.0/modules/taxonomy/" version="2.0">
  <channel>
    <title>Wireless MCU中的主题 Re: RF High Power Model Multiple Errors</title>
    <link>https://community.nxp.com/t5/Wireless-MCU/RF-High-Power-Model-Multiple-Errors/m-p/1161986#M10223</link>
    <description>&lt;P&gt;This warns for all NXP (former Freescale) RF ADS product models. This warning occurs because we use 2 0 pH inductors inside all SPDK's for mutual inductance. The warn is due to the negative value of the mutual inductance coupling the gate and drain inside the FET2 transistor. The negative value results from the direction of the 2 inductors being coupled. The value of inductors are ~0pH and doesn't influence the simulation.&lt;/P&gt;
&lt;P&gt;This warning is not a concern. Since it is just a warning it can be reviewed and in this case ignored.&lt;/P&gt;
&lt;P&gt;&amp;nbsp;&lt;/P&gt;
&lt;P&gt;Best Regards&lt;/P&gt;
&lt;P&gt;Pavel&lt;/P&gt;
&lt;P&gt;NXP TIC&lt;/P&gt;
&lt;P&gt;&amp;nbsp;&lt;/P&gt;</description>
    <pubDate>Thu, 01 Oct 2020 18:19:21 GMT</pubDate>
    <dc:creator>LPP</dc:creator>
    <dc:date>2020-10-01T18:19:21Z</dc:date>
    <item>
      <title>RF High Power Model Multiple Errors</title>
      <link>https://community.nxp.com/t5/Wireless-MCU/RF-High-Power-Model-Multiple-Errors/m-p/1161173#M10218</link>
      <description>&lt;P&gt;Hello,&lt;/P&gt;&lt;P&gt;I am trying a harmonic balance simulation on the A2I20H060N high power model. I installed both design kits as required however I get the following errors whenever I run the simulation. I tried digging into the files inside the design kit and found&amp;nbsp;&lt;EM&gt;nxp_A2I20H060N_pkg_netlists.net&amp;nbsp;&lt;/EM&gt;&amp;nbsp;which seems to contain the variables mentioned. Do I need to edit this file to the correct values or is there a different source for the problem?&lt;/P&gt;&lt;P&gt;Also note that I followed the same installation procedure for the high power model of a different IC and it worked just fine.&lt;/P&gt;&lt;P&gt;&lt;span class="lia-inline-image-display-wrapper lia-image-align-inline" image-alt="nxp_A2I20H060N_pkg_netlists.net" style="width: 999px;"&gt;&lt;img src="https://community.nxp.com/t5/image/serverpage/image-id/126534iBE23FECC86850746/image-size/large?v=v2&amp;amp;px=999" role="button" title="0-02-06-92771dc1f3990e91dd704f736d80e72ae5ed3eb6a95c989f41ac0aa183439d27_4fcbffcc.jpg" alt="nxp_A2I20H060N_pkg_netlists.net" /&gt;&lt;span class="lia-inline-image-caption" onclick="event.preventDefault();"&gt;nxp_A2I20H060N_pkg_netlists.net&lt;/span&gt;&lt;/span&gt;&lt;span class="lia-inline-image-display-wrapper lia-image-align-inline" image-alt="ADS Simulation Error" style="width: 999px;"&gt;&lt;img src="https://community.nxp.com/t5/image/serverpage/image-id/126535i109540E0136636FA/image-size/large?v=v2&amp;amp;px=999" role="button" title="0-02-06-5c0e12eeba9522b035fb14dc96c52def8b5e3383d194a1333ac4fae19fd434f6_cffb925b.jpg" alt="ADS Simulation Error" /&gt;&lt;span class="lia-inline-image-caption" onclick="event.preventDefault();"&gt;ADS Simulation Error&lt;/span&gt;&lt;/span&gt;&lt;/P&gt;</description>
      <pubDate>Wed, 30 Sep 2020 08:20:36 GMT</pubDate>
      <guid>https://community.nxp.com/t5/Wireless-MCU/RF-High-Power-Model-Multiple-Errors/m-p/1161173#M10218</guid>
      <dc:creator>jason_hipolito</dc:creator>
      <dc:date>2020-09-30T08:20:36Z</dc:date>
    </item>
    <item>
      <title>Re: RF High Power Model Multiple Errors</title>
      <link>https://community.nxp.com/t5/Wireless-MCU/RF-High-Power-Model-Multiple-Errors/m-p/1161986#M10223</link>
      <description>&lt;P&gt;This warns for all NXP (former Freescale) RF ADS product models. This warning occurs because we use 2 0 pH inductors inside all SPDK's for mutual inductance. The warn is due to the negative value of the mutual inductance coupling the gate and drain inside the FET2 transistor. The negative value results from the direction of the 2 inductors being coupled. The value of inductors are ~0pH and doesn't influence the simulation.&lt;/P&gt;
&lt;P&gt;This warning is not a concern. Since it is just a warning it can be reviewed and in this case ignored.&lt;/P&gt;
&lt;P&gt;&amp;nbsp;&lt;/P&gt;
&lt;P&gt;Best Regards&lt;/P&gt;
&lt;P&gt;Pavel&lt;/P&gt;
&lt;P&gt;NXP TIC&lt;/P&gt;
&lt;P&gt;&amp;nbsp;&lt;/P&gt;</description>
      <pubDate>Thu, 01 Oct 2020 18:19:21 GMT</pubDate>
      <guid>https://community.nxp.com/t5/Wireless-MCU/RF-High-Power-Model-Multiple-Errors/m-p/1161986#M10223</guid>
      <dc:creator>LPP</dc:creator>
      <dc:date>2020-10-01T18:19:21Z</dc:date>
    </item>
  </channel>
</rss>

