topic Re: TEA1916 inrush current startup in Other NXP Products

TEA1916 inrush current startup

juliocruz — Sat, 07 Sep 2019 08:00:53 GMT

Hello,

A power supply based on the evaluation board (TEA1916DB1262 is getting high inrush current when the cable is connected, creating sparks and issues in the system.

I tried adjusting Rgate as suggested in TRM (10.1 Setting the soft start power level) but the results are similar. In fact, after changing from 180K to 120K, two (2) boards units get damaged (SUPIC is ~4.22V).

Below some questions:

What could get wrong after changing Rgate from 180K to 120K that the boards get damaged?
Which others settings are affected when Rgate is changed?
During the startup, how to limit the current on the the boost capacitor (C115) of the evaluation board?
What is the function of the diode D105 in the evaluation board? This could be causing the inrush reported on this test?

Appreciated any suggestion in this regards,

Thanks

Re: TEA1916 inrush current startup

juliocruz — Fri, 13 Sep 2019 04:56:02 GMT

Dear guoweisun‌, please, may you take a look to the questions in this post related with the inrush current? Thanks

Re: TEA1916 inrush current startup

guoweisun — Mon, 16 Sep 2019 08:03:30 GMT

Hi,

Various Rgate will bring effect on expected start frequency,if use 120K there is 300Khz,if 180K will bring 180Khz.

In the start up the D105 is shunt diode. D105 will protect the PFC MOSFET ( forbid large current flow into L104 then saturation)