NFCのトピックCurrent consumption NT3H211 EEPROM

Current consumption NT3H211 EEPROM

dominik_neeser — Fri, 06 Jul 2018 14:15:05 GMT

Dear NXP Support,

I am looking for the nominal current consumptions of the NXP tag NT3H2111_2211

In chapter 13.1 “13.1 Electrical characteristics” of the datasheet I can only find a current consumption referring to I2C.

However I am interested in the current consumption for writing data to the internal Tag EEPROM via I2C (without giving any NFC field).

Re: Current consumption NT3H211 EEPROM

IvanRuiz — Tue, 10 Jul 2018 21:48:45 GMT

Hello,

I am currently waiting for internal confirmation about your request. I will come back asap.

Regards,

Ivan.

Re: Current consumption NT3H211 EEPROM

dominik_neeser — Mon, 16 Jul 2018 13:10:11 GMT

Hello Ivan,

is there any conformation already available?

Thanks in advance,

Dominik

Re: Current consumption NT3H211 EEPROM

IvanRuiz — Mon, 16 Jul 2018 14:32:24 GMT

Hello,

Please see below information from the internal team:

NTAG I²C plus consumes 185µA@1.8V when I²C in Stand-by / Active state (for v1 version that value is 155µA) – this is with considered leakage on SDA, SCL lines (10µA).

Average during EE Read                 = like standby
Max during EE Read Access           = +60 µA
Average during EE Write                  = +30 µA
Max during EE Write Access            = +160 µA
Average during I2C Register Read   = +10 µA
Average during I2C Register Write   = +10 µA

“0 power consumption” may be achieved by:

Try to turn OFF NTAG's Vcc until:

I²C communication is needed
Usage of SRAM is needed

Detect RF activity (MCU “knows” RF field is present)

Vout goes high when tag is exposed to RF field
Configure FD pin to go low on RF activity for (open drain – needs pullup)

Recommendations:

FD pin pull-up above 1kOhm
General I²C BUS pull-up for each line SDA, SCL (depends on bus load, but usually around 1k – 10kOhm)
Capacitor in range 100nF – 200nF from Vout to GND
NTAG's SDA, SCL, Vcc controlled by MCU

Regards,

Ivan.