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    <title>topic Re: Eeprom endurance and Writing and erase/programming process in LPC Microcontrollers</title>
    <link>https://community.nxp.com/t5/LPC-Microcontrollers/Eeprom-endurance-and-Writing-and-erase-programming-process/m-p/749283#M30182</link>
    <description>&lt;HTML&gt;&lt;HEAD&gt;&lt;/HEAD&gt;&lt;BODY&gt;&lt;P&gt;Hi Javier,&lt;/P&gt;&lt;P&gt;Your understanding is correct, write the word which has never write before in the same page, don't affect the endurance of another word of the same page.&lt;BR /&gt;Actually, the erase/programing process is done in the whole page.&lt;/P&gt;&lt;P&gt;&lt;/P&gt;&lt;P&gt;&lt;BR /&gt;Have a great day,&lt;BR /&gt;Kerry&lt;/P&gt;&lt;P&gt;&lt;/P&gt;&lt;P&gt;-----------------------------------------------------------------------------------------------------------------------&lt;BR /&gt;Note: If this post answers your question, please click the Correct Answer button. Thank you!&lt;BR /&gt;-----------------------------------------------------------------------------------------------------------------------&lt;/P&gt;&lt;/BODY&gt;&lt;/HTML&gt;</description>
    <pubDate>Mon, 23 Apr 2018 06:25:44 GMT</pubDate>
    <dc:creator>kerryzhou</dc:creator>
    <dc:date>2018-04-23T06:25:44Z</dc:date>
    <item>
      <title>Eeprom endurance and Writing and erase/programming process</title>
      <link>https://community.nxp.com/t5/LPC-Microcontrollers/Eeprom-endurance-and-Writing-and-erase-programming-process/m-p/749282#M30181</link>
      <description>&lt;HTML&gt;&lt;HEAD&gt;&lt;/HEAD&gt;&lt;BODY&gt;&lt;P&gt;Hi, I have one question about the writing and erase/programming process for the LPC43xx MCUs. In the datasheet at 50.6.2.1 section, indicates the following:&lt;/P&gt;&lt;P&gt;&lt;/P&gt;&lt;P&gt;&lt;EM&gt;- "Partial page writes are allowed, and the EEPROM will only take locations where a word has been written for the erase/program cycle."&lt;/EM&gt;&lt;/P&gt;&lt;P&gt;&lt;/P&gt;&lt;P&gt;Does this sentence means that the writing of a word, do not affect in the ENDURANCE of another word of the SAME page? In other words, the erase/programming process is done in the hole page, or just in the writing words? Thanks in advance.&lt;/P&gt;&lt;/BODY&gt;&lt;/HTML&gt;</description>
      <pubDate>Fri, 20 Apr 2018 11:00:20 GMT</pubDate>
      <guid>https://community.nxp.com/t5/LPC-Microcontrollers/Eeprom-endurance-and-Writing-and-erase-programming-process/m-p/749282#M30181</guid>
      <dc:creator>javiervallori</dc:creator>
      <dc:date>2018-04-20T11:00:20Z</dc:date>
    </item>
    <item>
      <title>Re: Eeprom endurance and Writing and erase/programming process</title>
      <link>https://community.nxp.com/t5/LPC-Microcontrollers/Eeprom-endurance-and-Writing-and-erase-programming-process/m-p/749283#M30182</link>
      <description>&lt;HTML&gt;&lt;HEAD&gt;&lt;/HEAD&gt;&lt;BODY&gt;&lt;P&gt;Hi Javier,&lt;/P&gt;&lt;P&gt;Your understanding is correct, write the word which has never write before in the same page, don't affect the endurance of another word of the same page.&lt;BR /&gt;Actually, the erase/programing process is done in the whole page.&lt;/P&gt;&lt;P&gt;&lt;/P&gt;&lt;P&gt;&lt;BR /&gt;Have a great day,&lt;BR /&gt;Kerry&lt;/P&gt;&lt;P&gt;&lt;/P&gt;&lt;P&gt;-----------------------------------------------------------------------------------------------------------------------&lt;BR /&gt;Note: If this post answers your question, please click the Correct Answer button. Thank you!&lt;BR /&gt;-----------------------------------------------------------------------------------------------------------------------&lt;/P&gt;&lt;/BODY&gt;&lt;/HTML&gt;</description>
      <pubDate>Mon, 23 Apr 2018 06:25:44 GMT</pubDate>
      <guid>https://community.nxp.com/t5/LPC-Microcontrollers/Eeprom-endurance-and-Writing-and-erase-programming-process/m-p/749283#M30182</guid>
      <dc:creator>kerryzhou</dc:creator>
      <dc:date>2018-04-23T06:25:44Z</dc:date>
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