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    <title>S32MのトピックRe: S32M276XX VPRE external MOSFET</title>
    <link>https://community.nxp.com/t5/S32M/S32M276XX-VPRE-external-MOSFET/m-p/2259020#M154</link>
    <description>&lt;P&gt;Hello&amp;nbsp;&lt;a href="https://community.nxp.com/t5/user/viewprofilepage/user-id/256881"&gt;@Ted_Qiao&lt;/a&gt;&amp;nbsp;,&lt;/P&gt;
&lt;P&gt;The total gate charge or input capacitance of the external PMOS is not specified. Therefore, your solution should work - using MOSFETs in parallel is safe, as the temperature of each device is balanced due to the positive temperature coefficient of channel resistivity. You may also consider adding a heatsink, if applicable.&lt;/P&gt;
&lt;P&gt;Best regards,&lt;/P&gt;
&lt;P&gt;Pavel&lt;/P&gt;</description>
    <pubDate>Wed, 10 Dec 2025 10:28:00 GMT</pubDate>
    <dc:creator>PavelL</dc:creator>
    <dc:date>2025-12-10T10:28:00Z</dc:date>
    <item>
      <title>S32M276XX VPRE external MOSFET</title>
      <link>https://community.nxp.com/t5/S32M/S32M276XX-VPRE-external-MOSFET/m-p/2258800#M153</link>
      <description>&lt;P&gt;Hi,&lt;/P&gt;&lt;P&gt;&lt;SPAN&gt;&lt;SPAN class=""&gt;I set the&amp;nbsp;VPRE external MOSFET as datasheet recommends, for external thermal dissipation.&lt;/SPAN&gt;&lt;/SPAN&gt;&lt;SPAN&gt;&lt;SPAN class=""&gt; When the input voltage = 16V, and the ambient temperature is 120degree, the case temperature of this MOSFET(VT200) will go up to 138degree, very high.&lt;/SPAN&gt;&lt;/SPAN&gt;&lt;/P&gt;&lt;P&gt;&lt;span class="lia-inline-image-display-wrapper lia-image-align-inline" image-alt="Ted_Qiao_0-1765355797929.png" style="width: 400px;"&gt;&lt;img src="https://community.nxp.com/t5/image/serverpage/image-id/369297i128F215A6F63539F/image-size/medium?v=v2&amp;amp;px=400" role="button" title="Ted_Qiao_0-1765355797929.png" alt="Ted_Qiao_0-1765355797929.png" /&gt;&lt;/span&gt;&lt;/P&gt;&lt;P&gt;&amp;nbsp;&lt;/P&gt;&lt;P&gt;&lt;SPAN&gt;&lt;SPAN class=""&gt;I am considering the solution to lower the temperature of this MOSFET.&lt;/SPAN&gt;&lt;/SPAN&gt;&lt;SPAN&gt;&lt;SPAN class=""&gt; Could I parallel a MOSFET with the same model to VT200, and use GCTL to drive both MOSFETs&amp;nbsp;simultaneously.&lt;/SPAN&gt;&lt;/SPAN&gt;&lt;SPAN&gt;&lt;SPAN class=""&gt; In this way, the external MOSFET power will be reduced to half.&lt;/SPAN&gt;&lt;/SPAN&gt;&lt;SPAN&gt;&lt;SPAN class=""&gt; Kindly ask your help to give comments of this solution or any better proposals also keep me informed. Thank you in advance.&lt;/SPAN&gt;&lt;/SPAN&gt;&lt;/P&gt;&lt;P&gt;&lt;span class="lia-inline-image-display-wrapper lia-image-align-inline" image-alt="Ted_Qiao_1-1765355816188.png" style="width: 400px;"&gt;&lt;img src="https://community.nxp.com/t5/image/serverpage/image-id/369298i150B68B1DF71A13C/image-size/medium?v=v2&amp;amp;px=400" role="button" title="Ted_Qiao_1-1765355816188.png" alt="Ted_Qiao_1-1765355816188.png" /&gt;&lt;/span&gt;&lt;/P&gt;&lt;P&gt;&amp;nbsp;&lt;/P&gt;&lt;P&gt;BR, Ted&lt;/P&gt;&lt;P&gt;&amp;nbsp;&lt;/P&gt;</description>
      <pubDate>Wed, 10 Dec 2025 08:41:36 GMT</pubDate>
      <guid>https://community.nxp.com/t5/S32M/S32M276XX-VPRE-external-MOSFET/m-p/2258800#M153</guid>
      <dc:creator>Ted_Qiao</dc:creator>
      <dc:date>2025-12-10T08:41:36Z</dc:date>
    </item>
    <item>
      <title>Re: S32M276XX VPRE external MOSFET</title>
      <link>https://community.nxp.com/t5/S32M/S32M276XX-VPRE-external-MOSFET/m-p/2259020#M154</link>
      <description>&lt;P&gt;Hello&amp;nbsp;&lt;a href="https://community.nxp.com/t5/user/viewprofilepage/user-id/256881"&gt;@Ted_Qiao&lt;/a&gt;&amp;nbsp;,&lt;/P&gt;
&lt;P&gt;The total gate charge or input capacitance of the external PMOS is not specified. Therefore, your solution should work - using MOSFETs in parallel is safe, as the temperature of each device is balanced due to the positive temperature coefficient of channel resistivity. You may also consider adding a heatsink, if applicable.&lt;/P&gt;
&lt;P&gt;Best regards,&lt;/P&gt;
&lt;P&gt;Pavel&lt;/P&gt;</description>
      <pubDate>Wed, 10 Dec 2025 10:28:00 GMT</pubDate>
      <guid>https://community.nxp.com/t5/S32M/S32M276XX-VPRE-external-MOSFET/m-p/2259020#M154</guid>
      <dc:creator>PavelL</dc:creator>
      <dc:date>2025-12-10T10:28:00Z</dc:date>
    </item>
    <item>
      <title>Re: S32M276XX VPRE external MOSFET</title>
      <link>https://community.nxp.com/t5/S32M/S32M276XX-VPRE-external-MOSFET/m-p/2265686#M165</link>
      <description>&lt;P&gt;Many thanks for your reply.&lt;/P&gt;&lt;P&gt;I would like to ask another question about how to decrease the power dissipation for S32M276XX system.&lt;/P&gt;&lt;P&gt;May I ask you about the feasibility of the following solution?&lt;/P&gt;&lt;P&gt;I would like to delete the Qpmos_vpre, and replace it with a DCDC converter. The DCDC converter got the power from battery, then generate 6.4Vtype directly connect to VPRE-pin.&lt;/P&gt;&lt;P&gt;This DCDC converter has an Enable pin, so the output could be controlled by S32M276XX. When in the working voltage range, for example:&amp;gt;9V, the DCDC will be enabled by SOC, when it is &amp;lt;9V, the DCDC will be stopped, the current will generated by MCU internally(low voltage drop, low power dissipation).&lt;/P&gt;&lt;P&gt;Pls. also checked the below block, kindly ask your comments about this solution.&lt;/P&gt;&lt;P&gt;Thanks and nice day!&lt;/P&gt;&lt;P&gt;&lt;span class="lia-inline-image-display-wrapper lia-image-align-inline" image-alt="Ted_Qiao_0-1766035292416.png" style="width: 400px;"&gt;&lt;img src="https://community.nxp.com/t5/image/serverpage/image-id/370543i3FEAAF5053ACDCC3/image-size/medium?v=v2&amp;amp;px=400" role="button" title="Ted_Qiao_0-1766035292416.png" alt="Ted_Qiao_0-1766035292416.png" /&gt;&lt;/span&gt;&lt;/P&gt;&lt;P&gt;&amp;nbsp;&lt;/P&gt;&lt;P&gt;&amp;nbsp;&lt;/P&gt;</description>
      <pubDate>Thu, 18 Dec 2025 05:22:09 GMT</pubDate>
      <guid>https://community.nxp.com/t5/S32M/S32M276XX-VPRE-external-MOSFET/m-p/2265686#M165</guid>
      <dc:creator>Ted_Qiao</dc:creator>
      <dc:date>2025-12-18T05:22:09Z</dc:date>
    </item>
    <item>
      <title>Re: S32M276XX VPRE external MOSFET</title>
      <link>https://community.nxp.com/t5/S32M/S32M276XX-VPRE-external-MOSFET/m-p/2265846#M167</link>
      <description>&lt;P&gt;Hello&amp;nbsp;&lt;a href="https://community.nxp.com/t5/user/viewprofilepage/user-id/256881"&gt;@Ted_Qiao&lt;/a&gt;&amp;nbsp;,&lt;/P&gt;
&lt;P&gt;Your approach seems interesting; however, since this configuration is not documented in the Hardware Design Guidelines for S32M2xx Microcontrollers, nor in any other official resources, and is not implemented on any evaluation board, I am &lt;STRONG&gt;unable to confirm&lt;/STRONG&gt; its validity.&lt;/P&gt;
&lt;P&gt;&lt;STRONG&gt;Please note&lt;/STRONG&gt;: Once an answer is marked as a solution, the original query is no longer actively tracked in our system. I only receive subscription emails for updates, and those can occasionally be missed.&lt;BR /&gt;If you need further assistance, the best approach is to create a new query.&lt;/P&gt;
&lt;P&gt;Best regards,&lt;/P&gt;
&lt;P&gt;Pavel&lt;/P&gt;</description>
      <pubDate>Thu, 18 Dec 2025 09:07:51 GMT</pubDate>
      <guid>https://community.nxp.com/t5/S32M/S32M276XX-VPRE-external-MOSFET/m-p/2265846#M167</guid>
      <dc:creator>PavelL</dc:creator>
      <dc:date>2025-12-18T09:07:51Z</dc:date>
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