FlexNVM Memory data retention ?

Ahmad_bozorgi — Thu, 01 Oct 2020 05:46:32 GMT

Hi.

with refer to S32K1xx datasheet, in 6.3.1.2 Reliability specifications data retention of FlexNVM memories mentioned:

respect to S32K144 FlexRAM & FlexNVM capacity which is 4KB & 64KB, so EEPROM backup to FlexRAM ratio in best situation will be 16. write endurance for these setting is at least 100K. data retention is 5 years.

1. Data retention after up to 1 K cycles is 20 years min. if we use half of D_Flash as FlexRAM backup and other for normal write (doing by software), how will be D-Flash data retention time ? (assuming linear relationship e.g. write/erase cycling of 100K)

2. if we write some locations of D-Flash for e.g. 50K and other locations for 1K, data retention time for these two locations is different ? (assume they are not in same block).

3. if we write/erase FlexRAM for e.g. 60K and after that these operations stops, data retention is same as previous?

Thanks.

Re: FlexNVM Memory data retention ?

danielmartynek — Thu, 01 Oct 2020 13:48:42 GMT

Hi Ahmad,

You are referring to an old datasheet, please use the latest rev.13

The ratio can be > 16 if you don't use the whole FlexRAM (less than 4kB of records in FlexRAM).

Please use the Flex Memory Endurance Calculator.

https://www.nxp.com/products/processors-and-microcontrollers/arm-microcontrollers/s32k-automotive-mcus/s32k1-microcontrollers-for-general-purpose:S32K?tab=Design_Tools_Tab

The EEPROM retention is specified as 20 years for 10% of the calculated endurance.

1 & 2.

The DFlash endurance is 1k max, Table 38, footnote 6.

As specified, 5 or 20 years, depending on the calculated endurance.

Best regards,

Daniel

topic FlexNVM Memory data retention ? in S32K

FlexNVM Memory data retention ?

Re: FlexNVM Memory data retention ?