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    <title>topic Re: Emulated EEPROM Query S12xE in S12 / MagniV Microcontrollers</title>
    <link>https://community.nxp.com/t5/S12-MagniV-Microcontrollers/Emulated-EEPROM-Query-S12xE/m-p/146025#M3953</link>
    <description>&lt;HTML&gt;&lt;HEAD&gt;&lt;/HEAD&gt;&lt;BODY&gt;&lt;P&gt;AN3490 Rev0 has following&amp;nbsp;lines on page7:&lt;/P&gt;&lt;P&gt;&amp;nbsp;&lt;/P&gt;&lt;UL&gt;&lt;LI&gt;To optimize the EEE write cycling, the S12XE implementation automatically &lt;EM&gt;filters out creating new&lt;/EM&gt;&lt;/LI&gt;&lt;LI&gt;&lt;EM&gt;NVM records for &lt;STRONG&gt;aligned word&lt;/STRONG&gt; data&lt;/EM&gt; if the data value written to the EEE RAM is the same as that already&lt;/LI&gt;&lt;LI&gt;in the RAM. Writes of byte or misaligned word data will always create new records.&lt;/LI&gt;&lt;/UL&gt;&lt;P&gt;&amp;nbsp;&lt;/P&gt;&lt;P&gt;I'm unable to find confirmation for these words in datasheet, but you could check the time how long&amp;nbsp;MGBUSY flag is set when you write the same data, and how long it is set when writing different data.&lt;/P&gt;&lt;/BODY&gt;&lt;/HTML&gt;</description>
    <pubDate>Wed, 14 Mar 2012 19:53:26 GMT</pubDate>
    <dc:creator>kef</dc:creator>
    <dc:date>2012-03-14T19:53:26Z</dc:date>
    <item>
      <title>Emulated EEPROM Query S12xE</title>
      <link>https://community.nxp.com/t5/S12-MagniV-Microcontrollers/Emulated-EEPROM-Query-S12xE/m-p/146024#M3952</link>
      <description>&lt;HTML&gt;&lt;HEAD&gt;&lt;/HEAD&gt;&lt;BODY&gt;&lt;P&gt;I am using Emulated EEPROM on S12XE.&lt;/P&gt;&lt;P&gt;If I write same value to same location again and again,&amp;nbsp;&lt;/P&gt;&lt;P&gt;will there be records created in D-flash each time, or the Emulated EEPROM hardware will understand that its a same value so do no create record again.&lt;/P&gt;&lt;/BODY&gt;&lt;/HTML&gt;</description>
      <pubDate>Wed, 14 Mar 2012 19:00:53 GMT</pubDate>
      <guid>https://community.nxp.com/t5/S12-MagniV-Microcontrollers/Emulated-EEPROM-Query-S12xE/m-p/146024#M3952</guid>
      <dc:creator>vmore</dc:creator>
      <dc:date>2012-03-14T19:00:53Z</dc:date>
    </item>
    <item>
      <title>Re: Emulated EEPROM Query S12xE</title>
      <link>https://community.nxp.com/t5/S12-MagniV-Microcontrollers/Emulated-EEPROM-Query-S12xE/m-p/146025#M3953</link>
      <description>&lt;HTML&gt;&lt;HEAD&gt;&lt;/HEAD&gt;&lt;BODY&gt;&lt;P&gt;AN3490 Rev0 has following&amp;nbsp;lines on page7:&lt;/P&gt;&lt;P&gt;&amp;nbsp;&lt;/P&gt;&lt;UL&gt;&lt;LI&gt;To optimize the EEE write cycling, the S12XE implementation automatically &lt;EM&gt;filters out creating new&lt;/EM&gt;&lt;/LI&gt;&lt;LI&gt;&lt;EM&gt;NVM records for &lt;STRONG&gt;aligned word&lt;/STRONG&gt; data&lt;/EM&gt; if the data value written to the EEE RAM is the same as that already&lt;/LI&gt;&lt;LI&gt;in the RAM. Writes of byte or misaligned word data will always create new records.&lt;/LI&gt;&lt;/UL&gt;&lt;P&gt;&amp;nbsp;&lt;/P&gt;&lt;P&gt;I'm unable to find confirmation for these words in datasheet, but you could check the time how long&amp;nbsp;MGBUSY flag is set when you write the same data, and how long it is set when writing different data.&lt;/P&gt;&lt;/BODY&gt;&lt;/HTML&gt;</description>
      <pubDate>Wed, 14 Mar 2012 19:53:26 GMT</pubDate>
      <guid>https://community.nxp.com/t5/S12-MagniV-Microcontrollers/Emulated-EEPROM-Query-S12xE/m-p/146025#M3953</guid>
      <dc:creator>kef</dc:creator>
      <dc:date>2012-03-14T19:53:26Z</dc:date>
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