topic Re: Problem with erase and write flash in S12 in S12 / MagniV Microcontrollers

Problem with erase and write flash in S12

mojtaba_al22 — Sat, 21 Dec 2019 05:01:30 GMT

Hi guys,

I have a Bootloader and application files in project with part of S912G128MLL,now i cant erase and write flash with Bootloader.

this is my app .prm file:

**************************************************************************************

NAMES END

HEXFILE bootloader.s19

SEGMENTS

RAM = READ_WRITE 0x2000 TO 0x37ff;

DFLASH = READ_WRITE 0x000400 TO 0x0013FF;

ROM_1400 = READ_ONLY 0x1400 TO 0x1FFF;

ROM_4000 = READ_ONLY 0x4000 TO 0x7F7F;

ROM_C000 = READ_ONLY 0xC000 TO 0xEFDF;

PAGE_08 = READ_ONLY 0x088000 TO 0x08BFFF;

PAGE_09 = READ_ONLY 0x098000 TO 0x09BFFF;

PAGE_0A = READ_ONLY 0x0A8000 TO 0x0ABFFF;

PAGE_0B = READ_ONLY 0x0B8000 TO 0x0BBFFF;

PAGE_0C = READ_ONLY 0x0C8000 TO 0x0C93FF;

PAGE_0C_A000 = READ_ONLY 0x0CA000 TO 0x0CBFFF;

PAGE_0E = READ_ONLY 0x0E8000 TO 0x0EBFFF;

END

PLACEMENT

_PRESTART,

STARTUP,

ROM_VAR,

STRINGS,

VIRTUAL_TABLE_SEGMENT,

NON_BANKED,

COPY

INTO ROM_C000;

DEFAULT_ROM INTO PAGE_08, PAGE_09, PAGE_0A, PAGE_0B, PAGE_0C, PAGE_0C_A000, PAGE_0E ;

SSTACK,

DEFAULT_RAM INTO RAM;

END

ENTRIES

END

STACKSIZE 0x100

*****************************************************************************

this is my Bootloader .prm file:

*****************************************************************************

INIT _BootStart

NAMES END

SEGMENTS

RAM = READ_WRITE 0x3800 TO 0x3CFF;

RAM_CODE_SEG = READ_ONLY 0xFD00 TO 0xFEFF RELOCATE_TO 0x3D00;

ROM_F000 = READ_ONLY 0xF000 TO 0xFCFF;

END

PLACEMENT

ROM_VAR,

STRINGS,

DEFAULT_ROM,

NON_BANKED INTO ROM_F000;

DEFAULT_RAM INTO RAM;

RAM_CODE INTO RAM_CODE_SEG;

END

ENTRIES

flash_array

END

STACKSIZE 0x100

VECTOR 0 _BootStart

VECTOR 1 _BootStart

VECTOR 2 _BootStart

*************************************************************************************************************

and this is my erase code in bootloader :

************************************************************************************************************

UINT8 PFlash_EraseSector(UINT32 address)

{

while((FSTAT & FSTAT_CCIF_MASK) == 0);

FSTAT = 0x30;

FCCOBIX = 0x00;

FCCOB = 0x0A00 | ((address & 0x00080000)>>16);

FCCOBIX = 0x01;

FCCOB = (address & 0x0000FFF8);

FSTAT = 0x80;

while((FSTAT & FSTAT_CCIF_MASK) == 0);

if((FSTAT & (FSTAT_ACCERR_MASK | FSTAT_FPVIOL_MASK)) != 0)

return FlashEraseError;

else

return noErr;

}

/******************************************************************************/

UINT8 PFlash_EraseSectorBySector(UINT32 addr_l, UINT32 addr_h) // addr_l=0x088000 , addr_h=0x08EFDF

{

UINT32 Address;

UINT8 Error;

for(Address = addr_l; Address < addr_h; Address += FLASH_SECTOR_SIZE) // FLASH_SECTOR_SIZE=200

{

Error = PFlash_EraseSector(Address);

if(Error != noErr)

return(Error);

}

return(noErr);

}

here is main code location

Please tell me where is my wrong

TNX

Re: Problem with erase and write flash in S12

kef2 — Mon, 23 Dec 2019 09:15:52 GMT

Hi,

I don't see how do you make code executing from RAM while flash is being erased/programmed. The problem is flash is not readable while it is being erased/programmed (as well not readable while backdoor access key is being verified, etc), but CPU has to read instructions somehow... So you need to move code execution to RAM/EEPROM/another flash bank at least for execution of these two lines:

FSTAT = 0x80; // launch flash command

while((FSTAT & FSTAT_CCIF_MASK) == 0); // wait until done

As well you need to a) disable interrupts or b) move interrupt vectors table and all interrupt service routines to RAM or other storage which is readable while flash commands are in progress.

Edward

Re: Problem with erase and write flash in S12

mojtaba_al22 — Mon, 23 Dec 2019 09:48:10 GMT

hi Edward

It's a little dumb for me.

If possible please explain by example or explain more.

Thank you for your post.

mojtaba.

Re: Problem with erase and write flash in S12

kef2 — Wed, 25 Dec 2019 16:23:01 GMT

Please be more specific what is not clear for you. How to move code to RAM? Simple:

in *.prm file add placement for code in RAM:

PLACEMENT /* here all predefined and user segments are placed into the SEGMENTS defined above. */
RAMCODE INTO RAM;

...

END

Fix you erase and program routines like this:

#pragma CODE_SEG __NEAR_SEG RAMCODE
void DoFlashCmd(void) {

//DisableInterrupts;
FSTAT = 0x80;

while((FSTAT & FSTAT_CCIF_MASK) == 0);

//EnableInterrupts;
}
#pragma CODE_SEG DEFAULT

UINT8 PFlash_EraseSector(UINT32 address)

{
while((FSTAT & FSTAT_CCIF_MASK) == 0);

FSTAT = 0x30;

FCCOBIX = 0x00;

FCCOB = 0x0A00 | ((address & 0x00080000)>>16);

FCCOBIX = 0x01;

FCCOB = (address & 0x0000FFF8);

DoFlashCmd();

if((FSTAT & (FSTAT_ACCERR_MASK | FSTAT_FPVIOL_MASK)) != 0)

return FlashEraseError;

else

return noErr;
}

Re: Problem with erase and write flash in S12

mojtaba_al22 — Sat, 28 Dec 2019 10:52:41 GMT

Thanks for your reply .I'll check it

Best Regards,

Mojtaba