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    <title>S12 / MagniV Microcontrollersのトピックd flash memory re-programming : Query : help</title>
    <link>https://community.nxp.com/t5/S12-MagniV-Microcontrollers/d-flash-memory-re-programming-Query-help/m-p/319935#M10370</link>
    <description>&lt;HTML&gt;&lt;HEAD&gt;&lt;/HEAD&gt;&lt;BODY&gt;&lt;P&gt;Hi All,&lt;/P&gt;&lt;P&gt;Currently i'm using MC9S12xhy controller, where d flash is used instead of external EEprom.&lt;/P&gt;&lt;P style="min-height: 8pt; padding: 0px;"&gt;&amp;nbsp;&lt;/P&gt;&lt;P&gt;As per my understanding, i will erase the the necessary d-flash sector in&amp;nbsp; my first operation cycle .According to the controller specification i can erase D-FLASH in&amp;nbsp; terms sectors&amp;nbsp; whereas i can&amp;nbsp; write it&amp;nbsp; in word-word basis.&lt;/P&gt;&lt;P style="min-height: 8pt; padding: 0px;"&gt;&amp;nbsp;&lt;/P&gt;&lt;P&gt;Controller document advice us to keep the wod or phrase in erased state before programming it.&lt;/P&gt;&lt;P style="min-height: 8pt; padding: 0px;"&gt;&amp;nbsp;&lt;/P&gt;&lt;P&gt;In case i need to re program only one particular word in a sector, then i need take the RAM copy&amp;nbsp; of the d flash sector ,erase the whole sector,update the RAM copy with the new change and then program it.&lt;/P&gt;&lt;P style="min-height: 8pt; padding: 0px;"&gt;&amp;nbsp;&lt;/P&gt;&lt;P&gt;I'm confused..is it necessary to&amp;nbsp; erase for every re-programming?&lt;/P&gt;&lt;P style="min-height: 8pt; padding: 0px;"&gt;&amp;nbsp;&lt;/P&gt;&lt;P&gt;Please helpe me on this regard!&lt;/P&gt;&lt;/BODY&gt;&lt;/HTML&gt;</description>
    <pubDate>Mon, 14 Jul 2014 12:55:48 GMT</pubDate>
    <dc:creator>FIDDO</dc:creator>
    <dc:date>2014-07-14T12:55:48Z</dc:date>
    <item>
      <title>d flash memory re-programming : Query : help</title>
      <link>https://community.nxp.com/t5/S12-MagniV-Microcontrollers/d-flash-memory-re-programming-Query-help/m-p/319935#M10370</link>
      <description>&lt;HTML&gt;&lt;HEAD&gt;&lt;/HEAD&gt;&lt;BODY&gt;&lt;P&gt;Hi All,&lt;/P&gt;&lt;P&gt;Currently i'm using MC9S12xhy controller, where d flash is used instead of external EEprom.&lt;/P&gt;&lt;P style="min-height: 8pt; padding: 0px;"&gt;&amp;nbsp;&lt;/P&gt;&lt;P&gt;As per my understanding, i will erase the the necessary d-flash sector in&amp;nbsp; my first operation cycle .According to the controller specification i can erase D-FLASH in&amp;nbsp; terms sectors&amp;nbsp; whereas i can&amp;nbsp; write it&amp;nbsp; in word-word basis.&lt;/P&gt;&lt;P style="min-height: 8pt; padding: 0px;"&gt;&amp;nbsp;&lt;/P&gt;&lt;P&gt;Controller document advice us to keep the wod or phrase in erased state before programming it.&lt;/P&gt;&lt;P style="min-height: 8pt; padding: 0px;"&gt;&amp;nbsp;&lt;/P&gt;&lt;P&gt;In case i need to re program only one particular word in a sector, then i need take the RAM copy&amp;nbsp; of the d flash sector ,erase the whole sector,update the RAM copy with the new change and then program it.&lt;/P&gt;&lt;P style="min-height: 8pt; padding: 0px;"&gt;&amp;nbsp;&lt;/P&gt;&lt;P&gt;I'm confused..is it necessary to&amp;nbsp; erase for every re-programming?&lt;/P&gt;&lt;P style="min-height: 8pt; padding: 0px;"&gt;&amp;nbsp;&lt;/P&gt;&lt;P&gt;Please helpe me on this regard!&lt;/P&gt;&lt;/BODY&gt;&lt;/HTML&gt;</description>
      <pubDate>Mon, 14 Jul 2014 12:55:48 GMT</pubDate>
      <guid>https://community.nxp.com/t5/S12-MagniV-Microcontrollers/d-flash-memory-re-programming-Query-help/m-p/319935#M10370</guid>
      <dc:creator>FIDDO</dc:creator>
      <dc:date>2014-07-14T12:55:48Z</dc:date>
    </item>
    <item>
      <title>Re: d flash memory re-programming : Query : help</title>
      <link>https://community.nxp.com/t5/S12-MagniV-Microcontrollers/d-flash-memory-re-programming-Query-help/m-p/319936#M10371</link>
      <description>&lt;HTML&gt;&lt;HEAD&gt;&lt;/HEAD&gt;&lt;BODY&gt;&lt;P&gt;Hello&lt;/P&gt;&lt;P&gt;&lt;/P&gt;&lt;P&gt;Yes it is necessary to erase the associated sector before re-programming locations that are already programmed.&lt;/P&gt;&lt;P&gt;&lt;/P&gt;&lt;P&gt;It is necessary that each D-FLASH word is in the erased state before being programmed. &lt;/P&gt;&lt;P&gt;If a location needs to be updated with a new value, then it must be erased first.&lt;/P&gt;&lt;P&gt;&lt;/P&gt;&lt;P&gt;The smallest range of the D-FLASH that can be erased is a sector, which means that to update a single word, then the RAM copy and update method you described is correct.&lt;/P&gt;&lt;P&gt;If the application allows, the reprogramming can wait until multiple words in the RAM copy have been updated, to reduce the program/erase overhead.&lt;/P&gt;&lt;P&gt;Alternatively if the application has spare D-FLASH locations then multiple locations can be used for a parameter that requires frequent updates. So following each erase the parameter is first programmed to location n, then location n+2, then n+4 etc.. This limits the erase cycles. You would need to track the current location in software.&lt;/P&gt;&lt;/BODY&gt;&lt;/HTML&gt;</description>
      <pubDate>Wed, 16 Jul 2014 12:35:20 GMT</pubDate>
      <guid>https://community.nxp.com/t5/S12-MagniV-Microcontrollers/d-flash-memory-re-programming-Query-help/m-p/319936#M10371</guid>
      <dc:creator>DPB</dc:creator>
      <dc:date>2014-07-16T12:35:20Z</dc:date>
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