AFV10700H Highest Power Density 750 W L Band RF LDMOS Transistor

Document created by edk Employee on Jul 17, 2017
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NXP boasts about power and prowess in the industry’s highest power density in LDMOS technology with a compact 750 W 1.3 x 2.55 inch reference circuit. See this demo for how our transistors deliver highest RF output power for automatic dependent surveillance – broadcast (ADS-B), identification friend-or-foe (IFF), and distance measuring equipment (DME) systems.

 

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