L-Band and S-Band Radar Devices for Aerospace

Document created by edk Employee on May 24, 2016Last modified by Diana Torres on Apr 18, 2017
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Demo

NXP boosts aerospace communications and radar performance for defense systems. See this demo for how our transistors deliver highest RF output power for radar and identification, friend-or-foe (IFF) systems

 

 

 

 

Demo / Product features

MMRF1314H 1000 W Pulse 52 V LDMOS Transistor

  • 100 W Peak, 1200-1400 MHz reference circuit
  • Ceramic package NI-1230H-4S
  • Internal prematch
  • > 20:1 VSWR

 

MMRF1317H 1500 W Pulse 50 V LDMOS Transistor

  • Highest power narrowband IFF transistor for defense and civil use
  • Ceramic package NI-1230H-4S
  • 1500 W Peak, 1030-1090 MHz reference circuit
  • > 10:1 VSWR

 

MMRF1312H 1200 W Pulse 52 V LDMOS Transistor

  • Highest power broadband L-Band transistor for military and civil use
  • Ceramic package NI-1230H-4S
  • 1200 W Peak, 900-1215 MHz reference circuit
  • > 20:1 VSWR

 

NXP Recommends

 

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