Different RF Low Power Devices, Different Line-Ups

Document created by edk Employee on May 24, 2016Last modified by Diana Torres on Apr 18, 2017
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Demo

NXP has a complete portfolio of RF low power devices. These include:

  • Drivers and pre-drivers for RF designs
  • Output RF devices for small cell solutions
  • Low-noise amplifiers (LNAs) for transceiver applications

 

 

 

 

 

 

 

Demo / product features

MMZ27333B 2 W BTS Driver Amplifier

  • 1500 – 2700 MHz operation
  • P1 dB  = 33 dBm
  • Gain = 36 dB @ 2600 MHz
  • LTE 10 MHz ACLR = - 48 dBc at 20 dBm
  • 4 x 4 mm QFN Package

MMG30271B 1/2 W BTS Pre-Driver GPA

  • 300 – 4000 MHz operation
  • P1dB = 27 dBm
  • Gain = 17 dB at 2600 MHz
  • ICC = 135 mA
  • SOT89 Package

MMG30301B 1 W BTS Pre-Driver GPA

  • 900 – 4300 MHz operation
  • P1 dB = 30 dBm
  • Gain = 16 dB @ 2600 MHz
  • ICC = 280 mA
  • SOT89 Package

NXP Recommends

MMZ27333B

MMG30271B

MMG30301B

 

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