Aerospace Communications with Highest Power LDMOS Narrowband Transistor

Document created by edk Employee on May 24, 2016Last modified by Diana Torres on Apr 18, 2017
Version 9Show Document
  • View in full screen mode

Demo

NXP demonstrates the industry’s highest power LDMOS narrowband transistor for IFF and civil transponders

 

 

 

 

Demo / product features

MMRF2010N 250 W Pulse 50 V LDMOS Transistor

  • 250 W Peak, 1030-1090 MHz reference circuit
  • Plastic package TO-270WB-14
  • 50 Ohm Input matching
  • Singe ended

 

MMRF1317H 1500 W Pulse 50 V LDMOS Transistor

  • Highest power narrowband IFF transistor for defense and civil use
  • Ceramic package NI-1230H-4S
  • 1500 W Peak, 1030-1090 MHz reference circuit
  • > 10:1 VSWR

 

NXP Recommends

                                                                 

              

 

   

              

 

 

              

Attachments

    Outcomes