Wideband GaN Communications for Military Applications

Document created by edk Employee on May 24, 2016Last modified by Diana Torres on Apr 18, 2017
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Demo

NXP’s GaN transistors have broad bandwidths, high power and ruggedness for electronic warfare and communication systems. See this demo which shows how we meet customer requirements for high performance while reducing size, weight, and power consumption

 

 

 

 

Demo / product features

MMRF5011N 12 W CW 28 V GaN Transistor

  • 200–2600 MHz, 10 W CW, 40% efficiency, wideband circuit
  • OM270-8 plastic package
  • Ideal for military and civil handheld radios

MMRF5013N 12 W CW 50 V GaN Transistor

  • 200–2600 MHz, 10 W CW, 40% efficiency, wideband circuit
  • OM270-8 plastic package
  • Ideal for military and civil handheld radios

MMRF5015N 125 W CW 50 V GaN Transistor

  • 200–2500 MHz, 100 W CW, 40% efficiency, wideband circuit
  • OM270-2 plastic package
  • Ideal for military and civil communications and electronic warfare systems

MMRF5019N 25 W CW 50 V GaN Transistor

  • 200–2500 MHz, 20 W CW, 40% efficiency, wideband circuit
  • OM270-8 plastic package
  • Ideal for military and civil handheld radios and electronic warfare

MMRF5021H 250 W CW 50 V GaN Transistor

  • 500–2500 MHz, 200 W CW, 40% efficiency, wideband circuit
  • NI-7804L ceramic package
  • Ideal for military and civil communications and electronic warfare systems

MMRF5023N 63 W CW 50 V GaN Transistor

  • 200–2500 MHz, 55 W CW, 40% efficiency, wideband circuit
  • OM270-2 plastic package
  • Ideal for military and civil communications and electronic warfare systems

NXP Recommends

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