4 New Cellular GaN Technology Doherty RF Power Transistors

Document created by edk Employee on May 24, 2016Last modified by Diana Torres on Apr 18, 2017
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Demo

NXP’s new Doherty amplifier-optimized power transistors provide high power, small footprints, and higher frequencies required for use in current and next-generation cellular base stations. The four new transistors collectively cover cellular bands from 1805 to 3600 MHz, meeting the needs of wireless carriers for superior performance at higher frequencies

 

 

 

 

Demo / product features

A2G35S160-01S / A2G35S200-01S 48 V GaN Doherty Power Amplifier Solution

  • Frequency 3400–3500 MHz
  • Asymmetrical Doherty performance at 8 dB OBO
    • Gain 13.8 Db
    • Efficiency 45.8%
    • Peak power 55.2 dBm
  • NI-400S-2S package

 

A2G26H281-04S 48 V GaN Doherty Power Amplifier In-package Solution

  • Frequency 2496–2690 MHz
  • Doherty performance at 8 dB OBO
    • Gain 15.3 dB
    • Efficiency 57%
    • Peak power 54.6 dBm
  • NI-780S-4L package

 

A2G22S251-01S 48 V GaN Single-ended Transistor

  • Frequency 1805–2200 MHz
  • Class AB performance at 7 dB OBO
    • Gain 18 dB
    • Efficiency 35%
    • Peak power 53.8 dBm
  • NI-400S-2S package

 

NXP Recommends

  • A2G22S251-01S – Single-ended GaN for 1805-2200 MHz cellular base stations
  • A2G26H281-04S – In-package asymmetric Doherty GaN for 2496-2690 MHz cellular base stations
  • A2G35S160-01S – Single-ended GaN for 3400-3600 MHz cellular base stations
  • A2G35S200-01S – Single-ended GaN for 3400-3600 MHz cellular base stations

 

Fast Track 5G with NXP

 

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